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| AP4569GH Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS Compliant S1 G1 S2 G2 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 40V 52m 14A -40V 90m -11A TO-252-4L Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 20 14 8.7 50 15.6 0.125 -55 to 150 -55 to 150 P-channel -40 20 -11 -6.6 -50 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case 3 3 Value Max. Max. 8 110 Units /W /W Thermal Resistance Junction-ambient Data and specifications subject to change without notice 200524051-1/7 AP4569GH N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 8 6 2 3 7 5 16 3 470 70 50 0.9 Max. Units 52 75 3 1 25 100 10 750 1.4 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=20V ID=6A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=6A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. 20 14 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4569GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 6 7 1.7 4 9 5 24 5 490 80 60 6 Max. Units 90 130 -3 -1 -25 100 12 780 9 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=20V ID=-5A VDS=-30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-5A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s Min. - Typ. 25 23 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . 3/7 AP4569GH N-Channel 30 30 T C =25 o C 10V 7.0V ID , Drain Current (A) 5.0V T C = 150 o C 10V 7.0V ID , Drain Current (A) 20 20 5.0V 4.5V 10 4.5V 10 V G =3.0V V G =3.0V 0 0 2 4 6 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 150 1.8 I D =4A T C =25 C 110 o I D =6A V G =10V Normalized RDS(ON) 1.4 RDS(ON0 (m ) 70 1.0 30 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 Normalized VGS(th) (V) 1.2 T j =150 o C 4 T j =25 o C 1.1 IS(A) 2 0.7 0 0 0.2 0.4 0.6 0.8 1 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4569GH N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) ID=6A V DS = 30 V 9 C iss C (pF) 6 100 C oss C rss 3 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 0.2 0.1 ID (A) 0.1 0.05 1ms 1 PDM 0.02 t T Single Pulse T C =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms DC 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =5V ID , Drain Current (A) 15 VG QG 4.5V T j =25 o C T j =150 o C 10 QGS QGD 5 Charge 0 Q 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4569GH P-Channel 30 30 T C =25 C o - 10V - 7.0V -ID , Drain Current (A) T C = 150 C o - 10V - 7.0V -ID , Drain Current (A) 20 - 5.0V - 4.5V 20 - 5.0V - 4.5V 10 10 V G = - 3.0V V G = - 3.0V 0 0 2 4 6 8 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 215 1.8 I D = -3 A T C =25 C Normalized RDS(ON) RDS(ON) (m) 165 1.4 o I D = -5 A V G = - 10V 115 1.0 65 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 5 4 Normalized -VGS(th) (V) 1.4 1.1 -IS(A) 3 T j =150 o C 2 T j =25 o C 0.7 1 0 0.3 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4569GH P-Channel f=1.0MHz 12 1000 10 -VGS , Gate to Source Voltage (V) I D =-5A V DS =-30V C iss 8 6 C (pF) 100 C oss C rss 4 2 0 0.0 3.0 6.0 9.0 12.0 15.0 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 0.2 0.1 -ID (A) 0.1 0.05 1ms 1 PDM 0.02 t T T C =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms DC 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =-5V 15 VG QG T j =25 o C T j =150 o C -ID , Drain Current (A) -4.5V QGS QGD 10 5 Charge 0 Q 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 |
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